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IDFW80C65D1
  • IDFW80C65D1

IDFW80C65D1

Active and preferred

Rapid 1 switching 650 V, 80 A emitter controlled silicon power diode in a TO-247 advanced isolation package for a best cost efficient solution.

Infineon Technologies IDFW80C65D1 Product Info

16 April 2026 0

Parameters

Configuration

Common Cathode

I(FSM) max

320 A

IF max

74 A

IF

59 A

IR max

40 µA

Irrm

23.5 A

Mounting

THT

Operating Temperature range

-40 °C to 175 °C

Package

TO-247

Ptot max

82 W

Qrr

2.62 µC

RthJC max

1.34 K/W

trr

73 ns

VF max

1.7 V

VF

1.45 V

Voltage Class max

650 V

Apps

Residential air conditioning, Motor control

Features

  • 650V emitter controlled technology
  • Temperature stable behaviour
  • Low forward voltage (VF)
  • Low reverse recovery charge (Qrr)
  • Low reverse recovery current (Irrm)
  • Maximum junction temperature 175°C
  • 2500 VRMS electrical isolation
  • 100% tested isolated mounted surface
  • Pb-free lead plating
  • RoHS compliant

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