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1EDC20I12MH
  • 1EDC20I12MH

1EDC20I12MH

EiceDRIVER™ 1200 V high-side gate driver IC with typical 4.4 A source and 4.1 A sink currents in DSO-8 package with UL certified galvanic isolation, active Miller clamp and short circuit clamping for IGBT Modules .For higher isolation rating, higher current, shorter propagation delay, check out our X3 Compact family , 1ED3122MU12H . The DSO-8 150 mil narrow body version with great price performance ratio is also available: 1EDI20I12MF

Infineon Technologies 1EDC20I12MH Product Info

16 April 2026 0

Parameters

Channels

1

Configuration

High-side

Input Vcc range

3.1 V to 17 V

Isolation Type

Galvanic isolation - Functional

Output Current (Source)

4.4 A

Output Current (Sink)

4.1 A

PDout

400 mW

Qualification

Industrial

RDSON_H(max)

4.3 Ω

RDSON_H(typ)

2.25 Ω

RDSON_L (max)

5 Ω

RDSON_L(typ)

2.25 Ω

RthJA

165 K/W

Turn Off Propagation Delay

300 ns

Turn On Propagation Delay

300 ns

VBS UVLO (Off)

11.1 V

VBS UVLO (On)

12 V

VCC UVLO (Off)

2.75 V

VCC UVLO (On)

2.85 V

Voltage Class

1200 V

Apps

Photovoltaic, Power conversion

Features

  • Recognized under UL1577
  • With VISO= 3000 V for 1 s
  • 1200V coreless Transformer
  • 2 A rail-to-rail outputs
  • 300 mil wide-body package
  • 8 mm creepage distance
  • Active Miller clamp

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