0
PRODUCTION
One of the DS3660's primary features is the on-chip nonimprinting memory, consisting of eight 128-byte banks incorporating a high-speed, direct-wired clearing function. The 1KB memory is constantly complemented in the background to prevent memory imprinting of data. The DS3660 architecture allows the user to clear selective banks of the memory based upon specified tamper events. In the event of a qualified tamper event, the desired bank(s) of memory are rapidly cleared and a negative bias can be applied to erase external memory.
The DS3660 includes a seconds counter, watchdog timer, CPU supervisor, nonvolatile (NV) SRAM controller, and on-chip temperature sensor. In the event of a primary power failure, an external battery source is automatically switched in to keep the memory, time, and tamper-detection circuitry active. Optionally, an internal 1.8V bias source can be selected to keep a low-voltage SRAM alive. The DS3660 is configurable to operate with a low-voltage mobile host microprocessor interface for embedded battery-operated devices. The DS3660 provides low-leakage tamper-detection inputs for interface to external sensors, interlocks, and antitamper meshes. The DS3660 also invokes a tamper event on absolute temperature, if the temperature rate-of-change (ROC) exceeds programmed limits, or if the crys