ADRF5130

RECOMMENDED FOR NEW DESIGNS

High Power, 44 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 3.5 GHz

Analog Devices ADRF5130 Product Info

10 February 2026 4

Features

Reflective, 50 Ω design
Low insertion loss:
- 0.6 dB typical to 2.0 GHz
- 0.7 dB typical to 3.5 GHz
High isolation
- 50 dB typical to 2.0 GHz
- 46 dB typical to 3.5 GHz
High power handling
- RF input power, continuous wave (CW) at T_CASE = 85°C
  - 43 dBm maximum operating
  - 46.5 dBm absolute maximum rating

High linearity
- 0.1 dB compression (P0.1dB): 46 dBm typical
- Input third-order intercept (IP3)
  - 68 dBm typical to 2 GHz
  - 65 dBm typical to 3.5 GHz
ESD ratings
- Human body model (HBM): 2 kV, Class 2
- Charged device model (CDM): 1.25 kV
Single positive supply: V_DD = 5 V
Positive control, TTL-compatible: V_CTL = 0 V or V_DD
24-lead, 4 mm × 4 mm LFCSP package (16 mm²)

Part details & applications

The ADRF5130 is a high power, reflective, 0.7 GHz to 3.8 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations.

The ADRF5130 has high power handling of 43 dBm (maximum) and 0.1 dB compression (P0.1dB) of 46 dBm, with a low insertion loss of 0.6 dB at 2 GHz and 0.7 dB at 3.5 GHz. On-chip circuitry operates at a single, positive supply voltage of 5 V and typical supply current of 1.06 mA, making the ADRF5130 an ideal alternative to pin diode-based switches.

The device comes in a RoHS compliant, compact, 24-lead, 4 mm × 4 mm LFCSP package.

Applications

Cellular/4G infrastructure
Wireless infrastructure
Military and high reliability applications
Test equipment
Pin diode replacement

Subscribe to Welllinkchips !

Your Name

* Email