ADGM1121

RECOMMENDED FOR NEW DESIGNS

0 Hz/DC to 18 GHz, DPDT, MEMS Switch

Analog Devices ADGM1121 Product Info

10 February 2026 4

Features

DC to 18 GHz frequency range
High bit rate capability up to 64 Gbps
Low insertion loss:
0.5 dB (typical) at 8 GHz
1.0 dB (typical) at 16 GHz
High Input IIP3: 73 dBm (typical)
High RF power handling: 33 dBm (maximum)
On-resistance: 1.9 Ω (typical)
High DC current handling: 200 mA
High switch cycle count: 100 million cycles (minimum)

Fast switching time: 200 μs TON (typical)
Integrated 3.3 V driver for simple control with parallel interface and SPI
Space-saving integrated passive including decoupling and shunt resistors
Small 5 mm × 4 mm × 1 mm, 24-lead plastic package
Temperature range: −40°C to +85°C

Part details & applications

The ADGM1121 is a wideband, double-pole, double-throw (DPDT) switch, fabricated using Analog Devices' microelectromechanical system (MEMS) switch technology. This technology enables a small form factor, wide RF bandwidth, highly linear and low insertion loss switch that is operational down to 0 Hz/DC, making it an ideal solution for a wide range of RF and precision equipment switching needs.

An integrated driver chip generates a high voltage to electrostatically actuate switch that can be controlled by a parallel interface and a serial peripheral interface (SPI). All switches are independently controllable.

The device is packaged in a 24-lead, 5 mm × 4 mm × 1 mm land grid array (LGA) package. To ensure optimum operation of the ADGM1121, see the Critical Operational Requirements section of the data sheet.

The on-resistance (R_ON) performance of the ADGM1121 is affected by part-to-part variation, channel-to-channel variation, cycle actuations, settling time post turn on, bias voltage, and temperature changes.

APPLICATIONS

ATE load and probe boards
DC with high speed loopback testing
High speed SerDes, PICe Gen4/5, USB4, PAM4
Relay replacements
Reconfigurable filters/attenuators
Military and microwave radios
Cellular infrastructure: 5G mm wave

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