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UCC5350-Q1
  • UCC5350-Q1
  • UCC5350-Q1
  • UCC5350-Q1
  • UCC5350-Q1

UCC5350-Q1

ACTIVE

Automotive ±5A single-channel isolated gate driver with Miller clamp or split outputs for SiC/IGBT

Texas Instruments UCC5350-Q1 Product Info

1 April 2026 5

Parameters

Number of channels

1

Isolation rating

Basic, Reinforced

Power switch

IGBT, MOSFET, SiCFET

Withstand isolation voltage (VISO) (Vrms)

3000, 5000

Working isolation voltage (VIOWM) (Vrms)

700, 1500

Transient isolation voltage (VIOTM) (VPK)

4242, 7000

Peak output current (A)

10

Peak output current (source) (typ) (A)

10

Peak output current (sink) (typ) (A)

10

Features

Active miller clamp, Split output

Output VCC/VDD (min) (V)

9.5

Output VCC/VDD (max) (V)

33

Input supply voltage (min) (V)

3

Input supply voltage (max) (V)

15

Propagation delay time (µs)

0.065

Input threshold

CMOS

Operating temperature range (°C)

-40 to 125

Rating

Automotive, Catalog

Bootstrap supply voltage (max) (V)

990

Rise time (ns)

10

Fall time (ns)

10

Undervoltage lockout (typ) (V)

8, 12

TI functional safety category

Functional Safety-Capable

Package

SOIC (D)-8-29.4 mm² 4.9 x 6

Features

  • ±5A minimum peak current drive strength
  • ±10A typical peak current drive strength
  • 3V to 15V input supply voltage
  • Up to 33V driver supply voltage
    • 8V and 12V UVLO options
  • 100V/ns minimum CMTI
  • Negative 5V handling capability on input pins
  • 100ns (maximum) propagation delay and <25ns part-to-part skew
  • 8-pin DWV (8.5mm creepage) and D (4mm creepage) packages
  • Isolation barrier life > 40 Years
  • Safety-related certifications:
    • DIN EN IEC 60747-17(VDE 0884-17)
    • UL 1577 componenet recognition program
  • CMOS inputs
  • Operating junction temperature: –40°C to +150°C
  • ±5A minimum peak current drive strength
  • ±10A typical peak current drive strength
  • 3V to 15V input supply voltage
  • Up to 33V driver supply voltage
    • 8V and 12V UVLO options
  • 100V/ns minimum CMTI
  • Negative 5V handling capability on input pins
  • 100ns (maximum) propagation delay and <25ns part-to-part skew
  • 8-pin DWV (8.5mm creepage) and D (4mm creepage) packages
  • Isolation barrier life > 40 Years
  • Safety-related certifications:
    • DIN EN IEC 60747-17(VDE 0884-17)
    • UL 1577 componenet recognition program
  • CMOS inputs
  • Operating junction temperature: –40°C to +150°C

Description

The UCC5350-Q1 is a single-channel, isolated gate driver with 10A source and 10A sink typical peak current designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UCC5350-Q1 has the option for Miller clamp or Split Outputs. The CLAMP pin is used to connect the transistor gate to an internal FET beside the output to prevent false turn-on caused by Miller current injection. The split outputs option allows separate control of the rise and fall times of the gate voltage with OUTH and OUTL pins.

The UCC5350-Q1 is available in a 4mm SOIC-8 (D) or 8.5mm wide body SOIC-8 (DWV) package and can support isolation voltage up to 3kVRMS and 5kVRMS, respectively. The input side is isolated from the output side with SiO2 capacitive isolation technology with longer than 40 years isolation barrier lifetime. The UCC5350-Q1 is a good fit for driving IGBTs or MOSFETs in applications such as high-voltage traction inverters and on-board chargers.

Compared to an opto-isolated gate driver, the UCC5350-Q1 device has lower part-to-part skew, lower propagation delay, higher operating temperature, and higher CMTI.

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