0
ACTIVE
Number of channels |
1 |
Power switch |
GaNFET, IGBT, MOSFET |
Peak output current (A) |
4 |
Input supply voltage (min) (V) |
4.5 |
Input supply voltage (max) (V) |
18 |
Features |
Hysteretic Logic |
Operating temperature range (°C) |
-40 to 125 |
Rise time (ns) |
9 |
Fall time (ns) |
7 |
Propagation delay time (µs) |
0.013 |
Input threshold |
CMOS, TTL |
Channel input logic |
Inverting, Non-Inverting |
Input negative voltage (V) |
-5 |
Rating |
Automotive |
Undervoltage lockout (typ) (V) |
4 |
Driver configuration |
Inverting, Non-Inverting |
SOT-23 (DBV)-5-8.12 mm² 2.9 x 2.8
The UCC27517A-Q1 single-channel high-speed low-side gate-driver device effectively drives MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC27517A-Q1 sources and sinks high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.
The UCC27517A-Q1 device handles –5 V at input.
The UCC27517A-Q1 provides 4-A source and 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.
The UCC27517A-Q1 operates over a wide VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds the output low outside VDD operating range. The ability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.