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UCC27517A-Q1
  • UCC27517A-Q1
  • UCC27517A-Q1

UCC27517A-Q1

ACTIVE

Automotive 4-A/4-A single-channel gate driver with 5-V UVLO and dual-input structure

Texas Instruments UCC27517A-Q1 Product Info

1 April 2026 0

Parameters

Number of channels

1

Power switch

GaNFET, IGBT, MOSFET

Peak output current (A)

4

Input supply voltage (min) (V)

4.5

Input supply voltage (max) (V)

18

Features

Hysteretic Logic

Operating temperature range (°C)

-40 to 125

Rise time (ns)

9

Fall time (ns)

7

Propagation delay time (µs)

0.013

Input threshold

CMOS, TTL

Channel input logic

Inverting, Non-Inverting

Input negative voltage (V)

-5

Rating

Automotive

Undervoltage lockout (typ) (V)

4

Driver configuration

Inverting, Non-Inverting

Package

SOT-23 (DBV)-5-8.12 mm² 2.9 x 2.8

Features

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Automotive Qualified Grade 1: –40°C
      to 125°C Ambient Operating Temperature
      Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C6
  • Low-Cost Gate-Driver Device Offering Superior
    Replacement of NPN and PNP Discrete Solutions
  • 4-A Peak-Source and Sink Symmetrical Drive
  • Ability to Handle Negative Voltages (–5 V) at
    Inputs
  • Fast Propagation Delays (13-ns typical)
  • Fast Rise and Fall Times (9-ns and 7-ns typical)
  • 4.5 to 18-V Single-Supply Range
  • Outputs Held Low During VDD UVLO (ensures
    glitch-free operation at power up and power down)
  • TTL and CMOS Compatible Input-Logic Threshold
    (independent of supply voltage)
  • Hysteretic-Logic Thresholds for High-Noise
    Immunity
  • Dual Input Design (choice of an inverting (IN– pin)
    or non-inverting (IN+ pin) driver configuration)
    • Unused Input Pin can be Used for Enable or
      Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • Operating Temperature Range of –40°C to 140°C
  • 5-Pin DBV (SOT-23) Package Option
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Automotive Qualified Grade 1: –40°C
      to 125°C Ambient Operating Temperature
      Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C6
  • Low-Cost Gate-Driver Device Offering Superior
    Replacement of NPN and PNP Discrete Solutions
  • 4-A Peak-Source and Sink Symmetrical Drive
  • Ability to Handle Negative Voltages (–5 V) at
    Inputs
  • Fast Propagation Delays (13-ns typical)
  • Fast Rise and Fall Times (9-ns and 7-ns typical)
  • 4.5 to 18-V Single-Supply Range
  • Outputs Held Low During VDD UVLO (ensures
    glitch-free operation at power up and power down)
  • TTL and CMOS Compatible Input-Logic Threshold
    (independent of supply voltage)
  • Hysteretic-Logic Thresholds for High-Noise
    Immunity
  • Dual Input Design (choice of an inverting (IN– pin)
    or non-inverting (IN+ pin) driver configuration)
    • Unused Input Pin can be Used for Enable or
      Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • Operating Temperature Range of –40°C to 140°C
  • 5-Pin DBV (SOT-23) Package Option

Description

The UCC27517A-Q1 single-channel high-speed low-side gate-driver device effectively drives MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC27517A-Q1 sources and sinks high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.

The UCC27517A-Q1 device handles –5 V at input.

The UCC27517A-Q1 provides 4-A source and 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.

The UCC27517A-Q1 operates over a wide VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds the output low outside VDD operating range. The ability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.

The UCC27517A-Q1 single-channel high-speed low-side gate-driver device effectively drives MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC27517A-Q1 sources and sinks high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.

The UCC27517A-Q1 device handles –5 V at input.

The UCC27517A-Q1 provides 4-A source and 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.

The UCC27517A-Q1 operates over a wide VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds the output low outside VDD operating range. The ability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.

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