0
ACTIVE
Number of channels |
1 |
Isolation rating |
Basic |
Power switch |
IGBT, SiCFET |
Withstand isolation voltage (VISO) (Vrms) |
3000 |
Working isolation voltage (VIOWM) (Vrms) |
990 |
Transient isolation voltage (VIOTM) (VPK) |
4242 |
Peak output current (A) |
10 |
Peak output current (source) (typ) (A) |
10 |
Peak output current (sink) (typ) (A) |
10 |
Features |
Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off |
Output VCC/VDD (min) (V) |
13 |
Output VCC/VDD (max) (V) |
33 |
Input supply voltage (min) (V) |
3 |
Input supply voltage (max) (V) |
5.5 |
Propagation delay time (µs) |
0.09 |
Input threshold |
CMOS |
Operating temperature range (°C) |
-40 to 150 |
Rating |
Automotive |
Bootstrap supply voltage (max) (V) |
990 |
Rise time (ns) |
33 |
Fall time (ns) |
27 |
Undervoltage lockout (typ) (V) |
12 |
SOIC (DW)-16-106.09 mm² 10.3 x 10.3
The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 900V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21759-Q1 has up to ±10A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 636VRMS working voltage with longer than 40 years isolation barrier life, 6kVPK surge immunity, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).
The UCC21759-Q1 includes the state-of-art protection features, such as fast short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO optimized for SiC and IGBT power transistors. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers versatility and simplifying the system design effort, size, and cost.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
