0
ACTIVE
Number of channels |
2 |
Isolation rating |
Reinforced |
Power switch |
IGBT, MOSFET, SiCFET |
Withstand isolation voltage (VISO) (Vrms) |
5700 |
Working isolation voltage (VIOWM) (Vrms) |
1500 |
Transient isolation voltage (VIOTM) (VPK) |
8000 |
Peak output current (A) |
6 |
Peak output current (source) (typ) (A) |
4 |
Peak output current (sink) (typ) (A) |
6 |
Features |
Enable, Programmable dead time |
Output VCC/VDD (min) (V) |
14.7 |
Output VCC/VDD (max) (V) |
25 |
Input supply voltage (min) (V) |
3 |
Input supply voltage (max) (V) |
18 |
Propagation delay time (µs) |
0.019 |
Input threshold |
CMOS, TTL |
Operating temperature range (°C) |
-40 to 125 |
Rating |
Automotive |
Bootstrap supply voltage (max) (V) |
2121 |
Rise time (ns) |
6 |
Fall time (ns) |
7 |
Undervoltage lockout (typ) (V) |
8, 12 |
TI functional safety category |
Functional Safety Quality-Managed |
SOIC (DWK)-14-106.09 mm² 10.3 x 10.3
The UCC21530-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5MHz.
The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850V.
This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.
The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
