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SN74LVC1G3208
  • SN74LVC1G3208
  • SN74LVC1G3208
  • SN74LVC1G3208
  • SN74LVC1G3208

SN74LVC1G3208

ACTIVE

Single 3-Input Positive OR-AND Gate

Texas Instruments SN74LVC1G3208 Product Info

1 April 2026 0

Parameters

Technology family

LVC

Supply voltage (min) (V)

1.65

Supply voltage (max) (V)

5.5

Number of channels

1

Inputs per channel

3

IOL (max) (mA)

32

IOH (max) (mA)

-32

Input type

Standard CMOS

Output type

Push-Pull

Features

Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns)

Data rate (max) (Mbps)

100

Rating

Catalog

Operating temperature range (°C)

-40 to 125

Package

DSBGA (YZP)-6-2.1875 mm² 1.75 x 1.25

Features

  • Available in the Texas Instruments NanoStar and NanoFree Packages
  • Supports 5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Provides Down Translation to VCC
  • Max tpd of 5 ns at 3.3 V
  • Low Power Consumption, 10-µA Max ICC
  • ±24-mA Output Drive at 3.3 V
  • Input Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at the Input (Vhys = 250 mV Typ @ 3.3 V)
  • Can Be Used in Three Combinations:
    • OR-AND Gate
    • OR Gate
    • AND Gate
  • Ioff Supports Live Insertion, Partial-Power-Down Mode, and Back-Drive Protection
  • Latch-Up Performance Exceeds 100 mA Per
    JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)

  • Available in the Texas Instruments NanoStar and NanoFree Packages
  • Supports 5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Provides Down Translation to VCC
  • Max tpd of 5 ns at 3.3 V
  • Low Power Consumption, 10-µA Max ICC
  • ±24-mA Output Drive at 3.3 V
  • Input Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at the Input (Vhys = 250 mV Typ @ 3.3 V)
  • Can Be Used in Three Combinations:
    • OR-AND Gate
    • OR Gate
    • AND Gate
  • Ioff Supports Live Insertion, Partial-Power-Down Mode, and Back-Drive Protection
  • Latch-Up Performance Exceeds 100 mA Per
    JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)

Description

This device is designed for 1.65-V to 5.5-V VCC operation.

The SN74LVC1G3208 device is a single 3-input positive OR-AND gate. It performs the Boolean function Y = (A + B) ● C in positive logic.

By tying one input to GND or VCC, the SN74LVC1G3208 device offers two more functions. When C is tied to VCC, this device performs as a 2-input OR gate (Y = A + B). When A is tied to GND, the device works as a 2-input AND gate (Y = B ● C). This device also works as a 2-input AND gate when B is tied to GND (Y = A ● C).

NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

This device is designed for 1.65-V to 5.5-V VCC operation.

The SN74LVC1G3208 device is a single 3-input positive OR-AND gate. It performs the Boolean function Y = (A + B) ● C in positive logic.

By tying one input to GND or VCC, the SN74LVC1G3208 device offers two more functions. When C is tied to VCC, this device performs as a 2-input OR gate (Y = A + B). When A is tied to GND, the device works as a 2-input AND gate (Y = B ● C). This device also works as a 2-input AND gate when B is tied to GND (Y = A ● C).

NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.