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SN74CBT16211C
  • SN74CBT16211C
  • SN74CBT16211C
  • SN74CBT16211C

SN74CBT16211C

ACTIVE

5-V, 1:1 (SPST), 24-channel FET bus switch with –2-V undershoot protection

Texas Instruments SN74CBT16211C Product Info

1 April 2026 0

Parameters

Protocols

Analog

Configuration

1:1 SPST

Number of channels

24

Bandwidth (MHz)

200

Supply voltage (max) (V)

5.5

Ron (typ) (mΩ)

3000

Input/output voltage (min) (V)

0

Input/output voltage (max) (V)

5.5

Operating temperature range (°C)

-40 to 85

ESD CDM (kV)

1

Input/output continuous current (max) (mA)

128

COFF (typ) (pF)

5.5

CON (typ) (pF)

14.5

OFF-state leakage current (max) (µA)

10

Ron (max) (mΩ)

12000

VIH (min) (V)

2

VIL (max) (V)

0.8

Rating

Catalog

Package

SSOP (DL)-56-190.647 mm² 18.42 x 10.35

Features

  • Member of the Texas Instruments Widebus™ Family
  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 3 µA Max)
  • VCC Operating Range From 4 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Widebus is a trademark of Texas Instruments.

  • Member of the Texas Instruments Widebus™ Family
  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 3 µA Max)
  • VCC Operating Range From 4 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Widebus is a trademark of Texas Instruments.

Description

The SN74CBT16211C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT16211C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT16211C is organized as two 12-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. When OE is low, the associated 12-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 12-bit bus switch is OFF, and the high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBT16211C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT16211C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT16211C is organized as two 12-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. When OE is low, the associated 12-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 12-bit bus switch is OFF, and the high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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