0
Architecture |
FET / CMOS Input, Voltage FB |
Number of channels |
1 |
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) |
8 |
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) |
12 |
GBW (typ) (MHz) |
1600 |
BW at Acl (MHz) |
350 |
Acl, min spec gain (V/V) |
7 |
Slew rate (typ) (V/µs) |
700 |
Vn at flatband (typ) (nV√Hz) |
4.8 |
Vn at 1 kHz (typ) (nV√Hz) |
7 |
Iq per channel (typ) (mA) |
14 |
Vos (offset voltage at 25°C) (max) (mV) |
1.8 |
Rail-to-rail |
No |
Features |
Decompensated |
Rating |
Catalog |
Operating temperature range (°C) |
-40 to 85 |
CMRR (typ) (dB) |
89 |
Input bias current (max) (pA) |
20 |
Offset drift (typ) (µV/°C) |
2 |
Iout (typ) (mA) |
70 |
2nd harmonic (dBc) |
74 |
3rd harmonic (dBc) |
106 |
Frequency of harmonic distortion measurement (MHz) |
5 |
SOIC (D)-8-29.4 mm² 4.9 x 6
The OPA657 device combines a high-gain bandwidth, low-distortion, voltage-feedback operational amplifier with a low-voltage noise JFET-input stage to offer a very high dynamic range amplifier for high-precision ADC (analog-to-digital converter) driving or wideband transimpedance applications. Photodiode applications see improved noise and bandwidth using this decompensated, high-gain bandwidth amplifier.
Very low level signals can be significantly amplified in a single OPA657 gain stage with exceptional bandwidth and accuracy. Having a high 1.6-GHz gain bandwidth product gives greater than 10-MHz signal bandwidths up to gains of 160 V/V (44 dB). The very low input bias current and capacitance supports this performance even for relatively high source impedances.
Broadband photodetector applications benefit from the low-voltage noise JFET inputs for the OPA657. The JFET input contributes virtually no current noise while for broadband applications, a low voltage noise is also required. The low 4.8 nV/√Hz input voltage noise provides exceptional input sensitivity for higher bandwidth applications. The example shown below gives a total equivalent input noise current of 1.8 pA/√Hz over a 10-MHz bandwidth.