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LMG1020
  • LMG1020
  • LMG1020

LMG1020

ACTIVE

7-A/5-A single channel gate driver with 5-V UVLO for nano second input pulses

Texas Instruments LMG1020 Product Info

1 April 2026 1

Parameters

Number of channels

1

Power switch

GaNFET, MOSFET

Peak output current (A)

7

Input supply voltage (min) (V)

4.75

Input supply voltage (max) (V)

5.25

Features

low-side, ultra-fast

Operating temperature range (°C)

-40 to 125

Rise time (ns)

0.4

Fall time (ns)

0.4

Propagation delay time (µs)

0.0025

Input threshold

TTL

Channel input logic

Inverting, Non-inverting

Input negative voltage (V)

0

Rating

Catalog

Undervoltage lockout (typ) (V)

3.5

Driver configuration

Low Side

Package

DSBGA (YFF)-6-1.4000000000000001 mm² 1 x 1.4000000000000001

Features

  • Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs
  • 1 ns Minimum Input Pulse Width
  • Up to 60 MHz Operation
  • 2.5 ns Typical, 4.5 ns Maximum Propagation Delay
  • 400 ps Typical Rise and Fall Time
  • 7-A Peak Source and 5-A Peak Sink Currents
  • 5-V Supply Voltage
  • UVLO and Overtemperature Protection
  • 0.8 mm × 1.2 mm WCSP Package
  • Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs
  • 1 ns Minimum Input Pulse Width
  • Up to 60 MHz Operation
  • 2.5 ns Typical, 4.5 ns Maximum Propagation Delay
  • 400 ps Typical Rise and Fall Time
  • 7-A Peak Source and 5-A Peak Sink Currents
  • 5-V Supply Voltage
  • UVLO and Overtemperature Protection
  • 0.8 mm × 1.2 mm WCSP Package

Description

The LMG1020 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low side drivers. The design simplicity of the LMG1020 enables extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.

0.8-mm × 1.2-mm WCSP package of LMG1020 minimizes gate loop inductance and maximizes power density in high-frequency applications.

The LMG1020 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low side drivers. The design simplicity of the LMG1020 enables extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.

0.8-mm × 1.2-mm WCSP package of LMG1020 minimizes gate loop inductance and maximizes power density in high-frequency applications.

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