0
ACTIVE
Vin (max) (V) |
65 |
Vin (min) (V) |
3 |
FET |
External back-to-back FET |
Device type |
Ideal diode controller |
Number of channels |
1 |
Rating |
Catalog |
Features |
Automotive load dump compatibility, Inrush current control, Linear control, Overvoltage protection, Reverse current blocking, Reverse polarity protection |
Imax (A) |
350 |
Iq (typ) (mA) |
0.428 |
Iq (max) (mA) |
0.5 |
IGate source (typ) (µA) |
60000 |
IGate sink (typ) (mA) |
1500 |
IGate pulsed (typ) (A) |
2.6 |
Operating temperature range (°C) |
-55 to 125 |
VSense reverse (typ) (mV) |
-4.5 |
Design support |
EVM, Simulation Model |
VGS (max) (V) |
15 |
Shutdown current (ISD) (mA) (A) |
0.003 |
Product type |
Ideal diode controller |
WSON (DRR)-12-9 mm² 3 x 3
The LM74810 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3V to 65V allows protection and control of 12-V and 24-V input powered systems. The device can withstand and protect the loads from negative supply voltages down to –65-V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM74810 employs reverse current blocking using linear regulation and comparator scheme. With common drain configuration of the power MOSFETs, the mid-point can be utilized for OR-ing designs using another ideal diode. The LM74810 has a maximum voltage rating of 65V. The loads can be protected from extended overvoltage transients like 200-V unsuppressed load dumps in 24-V battery systems by configuring the device with external MOSFETs in common source topology.