Product
0
LM74701-Q1
  • LM74701-Q1

LM74701-Q1

ACTIVE

Automotive 3.2-V to 65-V reverse battery protection ideal diode controller with integrated VDS clamp

Texas Instruments LM74701-Q1 Product Info

1 April 2026 0

Parameters

Vin (max) (V)

65

Vin (min) (V)

3.2

FET

External single FET

Device type

Ideal diode controller

Number of channels

1

Rating

Automotive

Features

Automotive load dump compatibility, Enable, Integrated VDS clamp, Linear control, Reverse current blocking, Reverse polarity protection

Imax (A)

250

Iq (typ) (mA)

0.08

Iq (max) (mA)

0.13

TI functional safety category

Functional Safety-Capable

IGate source (typ) (µA)

11000

IGate pulsed (typ) (A)

2.3

Operating temperature range (°C)

-40 to 125

VSense reverse (typ) (mV)

-11

Shutdown current (ISD) (mA) (A)

0.001

Product type

Ideal diode controller

Package

SOT-23-THN (DDF)-8-8.12 mm² 2.9 x 2.8

Features

  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3.2-V to 65-V input range (3.9-V startup)
  • –33-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20 mV ANODE to CATHODE forward voltage drop regulation
  • 1-µA shutdown current (EN = Low)
  • 80-µA operating quiescent current (EN = High)
  • 2-A peak gate turn-off current
  • Fast response to reverse current blocking: < 0.75 µs
  • Integrated battery voltage monitoring switch (SW)
  • Meets automotive ISO7637 transient requirements without additional input TVS diode (TVS less)
  • 8-Pin SOT-23 package 2.90 mm × 1.60 mm
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3.2-V to 65-V input range (3.9-V startup)
  • –33-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20 mV ANODE to CATHODE forward voltage drop regulation
  • 1-µA shutdown current (EN = Low)
  • 80-µA operating quiescent current (EN = High)
  • 2-A peak gate turn-off current
  • Fast response to reverse current blocking: < 0.75 µs
  • Integrated battery voltage monitoring switch (SW)
  • Meets automotive ISO7637 transient requirements without additional input TVS diode (TVS less)
  • 8-Pin SOT-23 package 2.90 mm × 1.60 mm

Description

The LM74701-Q1 is an automotive AEC Q100 qualified ideal diode controller which operates in conjunction with an external N-channel MOSFET as an ideal diode for low loss reverse polarity protection with a 20-mV forward voltage drop. LM74701-Q1 is suitable for input protection of 12-V automotive systems. The 3.2-V input voltage support is particularly well suited for severe cold crank requirements in automotive systems.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and ensures zero DC reverse current flow. Fast response (< 0.75 µs) to reverse current blocking makes the device suitable for systems with output voltage holdup requirements during ISO7637 pulse testing as well as power fail and input micro-short conditions. The LM74701-Q1 has a unique integrated VDS clamp feature which enables users to achieve TVS less input polarity protection solution and save on average a typical 60% of PCB space in constrained automotive systems.

The LM74701-Q1 controller provides a charge pump gate drive for an external N-channel MOSFET. With the enable pin low, the controller is off and draws approximately 1 µA of current.

The LM74701-Q1 is an automotive AEC Q100 qualified ideal diode controller which operates in conjunction with an external N-channel MOSFET as an ideal diode for low loss reverse polarity protection with a 20-mV forward voltage drop. LM74701-Q1 is suitable for input protection of 12-V automotive systems. The 3.2-V input voltage support is particularly well suited for severe cold crank requirements in automotive systems.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and ensures zero DC reverse current flow. Fast response (< 0.75 µs) to reverse current blocking makes the device suitable for systems with output voltage holdup requirements during ISO7637 pulse testing as well as power fail and input micro-short conditions. The LM74701-Q1 has a unique integrated VDS clamp feature which enables users to achieve TVS less input polarity protection solution and save on average a typical 60% of PCB space in constrained automotive systems.

The LM74701-Q1 controller provides a charge pump gate drive for an external N-channel MOSFET. With the enable pin low, the controller is off and draws approximately 1 µA of current.

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8