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LF156JAN
  • LF156JAN
  • LF156JAN
  • LF156JAN

LF156JAN

ACTIVE

Military-grade, single, 40-V, 5-MHz, FET-input operational amplifier Common Features Uncommon Features Common Features Uncommon Features

Texas Instruments LF156JAN Product Info

1 April 2026 0

Parameters

Number of channels

1

Rail-to-rail

No

GBW (typ) (MHz)

5

Slew rate (typ) (V/µs)

12

Vos (offset voltage at 25°C) (max) (mV)

5

Iq per channel (typ) (mA)

5

Vn at 1 kHz (typ) (nV√Hz)

12

Rating

Military

Operating temperature range (°C)

-55 to 125

Offset drift (typ) (µV/°C)

5

Input bias current (max) (pA)

100

CMRR (typ) (dB)

100

Iout (typ) (A)

0.025

Architecture

FET

Input common mode headroom (to negative supply) (typ) (V)

3

Input common mode headroom (to positive supply) (typ) (V)

0.1

Output swing headroom (to negative supply) (typ) (V)

2

Output swing headroom (to positive supply) (typ) (V)

-2

Package

TO-CAN (LMC)-8-80.2816 mm² 8.96 x 8.96

Features

  • Advantages
    • Replace Expensive Hybrid and Module FET Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling Compared with MOSFET Input Devices
    • Excellent for Low Noise Applications using either High or Low Source Impedance—Very Low 1/f Corner
    • Offset Adjust does not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
    • New Output Stage Allows use of Large Capacitive Loads (5,000 pF) without Stability Problems
    • Internal Compensation and Large Differential Input Voltage Capability

Common Features

  • Low Input Bias Current: 30pA
  • Low Input Offset Current: 3pA
  • High Input Impedance: 1012Ω
  • Low Input Noise Current: 0.01 pA / √Hz
  • High Common-Mode Rejection Ratio: 100 dB
  • Large DC Voltage Gain: 106 dB

Uncommon Features

  • Extremely Fast Settling Time to 0.01% 1.5μs
  • Fast Slew Rate 12V/µs
  • Wide Gain Bandwidth 5MHz
  • Low Input Noise Voltage 12 nV / √Hz

All trademarks are the property of their respective owners.

  • Advantages
    • Replace Expensive Hybrid and Module FET Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling Compared with MOSFET Input Devices
    • Excellent for Low Noise Applications using either High or Low Source Impedance—Very Low 1/f Corner
    • Offset Adjust does not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
    • New Output Stage Allows use of Large Capacitive Loads (5,000 pF) without Stability Problems
    • Internal Compensation and Large Differential Input Voltage Capability

Common Features

  • Low Input Bias Current: 30pA
  • Low Input Offset Current: 3pA
  • High Input Impedance: 1012Ω
  • Low Input Noise Current: 0.01 pA / √Hz
  • High Common-Mode Rejection Ratio: 100 dB
  • Large DC Voltage Gain: 106 dB

Uncommon Features

  • Extremely Fast Settling Time to 0.01% 1.5μs
  • Fast Slew Rate 12V/µs
  • Wide Gain Bandwidth 5MHz
  • Low Input Noise Voltage 12 nV / √Hz

All trademarks are the property of their respective owners.

Description

This is the first monolithic JFET input operational amplifier to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). This amplifier features low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The device is also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/ƒ noise corner.

This is the first monolithic JFET input operational amplifier to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). This amplifier features low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The device is also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/ƒ noise corner.

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