Texas Instruments DRV8351-SEP Product Info

Parameters

Rating	Space
Architecture	Gate driver
Vs (min) (V)	5
Vs ABS (max) (V)	57.5
Operating temperature range (°C)	-55 to 125

Package

TSSOP (PW)-20-41.6 mm² 6.5 x 6.4

Features

40V Three Phase Half-Bridge Gate driver
- Drives N-Channel MOSFETs (NMOS)
- Gate Driver Supply (GVDD): 5-15V
- MOSFET supply (SHx) supports up to 40V
Radiation Performance
- SEL, SEB, and SET resistant up to LET = 43 MeV-cm2 /mg
- SET and SEFI characterized up to LET = 43 MeV-cm2 /mg
- TID assured for every wafer lot up to 30 krad(Si)
- TID characterized up to 30 krad(Si)
- Cross conduction event is observed during SEE and SEB. Refer to SEE report for more details.
Space-enhanced plastic (space EP):
- Controlled Baseline
- One Assembly/Test Site
- One Fabrication site
- Extended Product Life Cycle
- Product Traceability
Integrated Bootstrap Diodes
Supports Inverting and Non-Inverting INLx inputs
Bootstrap gate drive architecture
- 750mA source current
- 1.5- sink current
Low leakage current on SHx pins (<55µA)
Absolute maximum BSTx voltage up to 57.5V
Supports negative transients up to -22V on SHx
Fixed deadtime insertion of 200nS
Supports 3.3V and 5V logic inputs with 20V Abs max
4nS typical propagation delay matching
Compact TSSOP package
Efficient system design with Power Blocks
Integrated protection features
- BST undervoltage lockout (BSTUV)
- GVDD undervoltage (GVDDUV)

40V Three Phase Half-Bridge Gate driver
- Drives N-Channel MOSFETs (NMOS)
- Gate Driver Supply (GVDD): 5-15V
- MOSFET supply (SHx) supports up to 40V
Radiation Performance
- SEL, SEB, and SET resistant up to LET = 43 MeV-cm2 /mg
- SET and SEFI characterized up to LET = 43 MeV-cm2 /mg
- TID assured for every wafer lot up to 30 krad(Si)
- TID characterized up to 30 krad(Si)
- Cross conduction event is observed during SEE and SEB. Refer to SEE report for more details.
Space-enhanced plastic (space EP):
- Controlled Baseline
- One Assembly/Test Site
- One Fabrication site
- Extended Product Life Cycle
- Product Traceability
Integrated Bootstrap Diodes
Supports Inverting and Non-Inverting INLx inputs
Bootstrap gate drive architecture
- 750mA source current
- 1.5- sink current
Low leakage current on SHx pins (<55µA)
Absolute maximum BSTx voltage up to 57.5V
Supports negative transients up to -22V on SHx
Fixed deadtime insertion of 200nS
Supports 3.3V and 5V logic inputs with 20V Abs max
4nS typical propagation delay matching
Compact TSSOP package
Efficient system design with Power Blocks
Integrated protection features
- BST undervoltage lockout (BSTUV)
- GVDD undervoltage (GVDDUV)

Description

DRV8351-SEP is a three phase half-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8351-SEPD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750mA source and 1.5A sink currents.

The phase pins SHx are able to tolerate significant negative voltage transients; while high side gate driver supply BSTx and GHx can support higher positive voltage transients (57.5V) abs max voltage which improve the robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high sides through GVDD and BST undervoltage lockout.

ELECTRONIC COMPONENTS
All In One Distributor

DRV8351-SEP

Radiation-tolerant, 40V simple 3-phase gate driver with bootstrap diodes

Texas Instruments DRV8351-SEP Product Info

Parameters

Package

Features

Description

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS All In One Distributor

DRV8351-SEP

Radiation-tolerant, 40V simple 3-phase gate driver with bootstrap diodes

Texas Instruments DRV8351-SEP Product Info

Parameters

Package

Features

Description

SUBMITTED SUCCESSFULLY！

ELECTRONIC COMPONENTS
All In One Distributor