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CSD87501L
  • CSD87501L

CSD87501L

ACTIVE

30-V, N channel NexFET™ power MOSFET, dual common drain LGA, 5.5 mOhm, gate ESD protection

Texas Instruments CSD87501L Product Info

1 April 2026 3

Parameters

VDS (V)

30

VGS (V)

20

Type

N-channel

Configuration

Dual Common Drain

Rds(on) at VGS=10 V (max) (mΩ)

3.9

Rds(on) at VGS=4.5 V (max) (mΩ)

5.5

VGSTH typ (typ) (V)

1.8

QG (typ) (nC)

15

QGD (typ) (nC)

6

QGS (typ) (nC)

5

ID - silicon limited at TC=25°C (A)

14

ID - package limited (A)

14

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

PICOSTAR (YJG)-10-4.9539 mm² 3.37 x 1.47

Features

  • Low on-resistance
  • Small footprint of 3.37 mm × 1.47 mm
  • Ultra-low profile – 0.2-mm high
  • Lead free
  • RoHS compliant
  • Halogen free
  • Gate ESD protection
  • Low on-resistance
  • Small footprint of 3.37 mm × 1.47 mm
  • Ultra-low profile – 0.2-mm high
  • Lead free
  • RoHS compliant
  • Halogen free
  • Gate ESD protection

Description

This 30-V, 6.6-mΩ, 3.37-mm × 1.47-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small size and common drain configuration make the device ideal for multi-cell battery pack applications and small handheld devices.




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