0
ACTIVE
VDS (V) |
30 |
VGS (V) |
20 |
Type |
N-channel |
Configuration |
Dual Common Drain |
Rds(on) at VGS=10 V (max) (mΩ) |
3.9 |
Rds(on) at VGS=4.5 V (max) (mΩ) |
5.5 |
VGSTH typ (typ) (V) |
1.8 |
QG (typ) (nC) |
15 |
QGD (typ) (nC) |
6 |
QGS (typ) (nC) |
5 |
ID - silicon limited at TC=25°C (A) |
14 |
ID - package limited (A) |
14 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
PICOSTAR (YJG)-10-4.9539 mm² 3.37 x 1.47
This 30-V, 6.6-mΩ, 3.37-mm × 1.47-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small size and common drain configuration make the device ideal for multi-cell battery pack applications and small handheld devices.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
