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CSD87312Q3E
  • CSD87312Q3E

CSD87312Q3E

ACTIVE

30-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3 mm, 38 mOhm

Texas Instruments CSD87312Q3E Product Info

1 April 2026 0

Parameters

VDS (V)

30

VGS (V)

10

Type

N-channel

Configuration

Dual Common Source

Rds(on) at VGS=4.5 V (max) (mΩ)

38

VGSTH typ (typ) (V)

1

QG (typ) (nC)

6.3

QGD (typ) (nC)

0.7

QGS (typ) (nC)

1.9

ID - silicon limited at TC=25°C (A)

27

ID - package limited (A)

27

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

VSON (DPA)-8-10.89 mm² 3.3 x 3.3

Features

  • Common Source Connection
  • Ultra Low Drain to Drain On-Resistance
  • Space Saving SON 3.3 x 3.3mm Plastic Package
  • Optimized for 5V Gate Drive
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • Common Source Connection
  • Ultra Low Drain to Drain On-Resistance
  • Space Saving SON 3.3 x 3.3mm Plastic Package
  • Optimized for 5V Gate Drive
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free

Description

The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.

The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.

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