0
VDS (V) |
-20 |
VGS (V) |
-8 |
Type |
P-channel |
Configuration |
Single |
Rds(on) at VGS=4.5 V (max) (mΩ) |
23.9 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
32.5 |
VGSTH typ (typ) (V) |
-0.85 |
QG (typ) (nC) |
3.6 |
QGD (typ) (nC) |
0.5 |
QGS (typ) (nC) |
1.1 |
ID - silicon limited at TC=25°C (A) |
9.6 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
WSON (DQK)-6-4 mm² 2 x 2
This 19.9mΩ, –20V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2mm × 2mm plastic package make the device ideal for battery operated space constrained operations.