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CSD25310Q2
  • CSD25310Q2
  • CSD25310Q2

CSD25310Q2

ACTIVE

-20-V, P channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 23.9 mOhm

Texas Instruments CSD25310Q2 Product Info

1 April 2026 1

Parameters

VDS (V)

-20

VGS (V)

-8

Type

P-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

23.9

Rds(on) at VGS=2.5 V (max) (mΩ)

32.5

VGSTH typ (typ) (V)

-0.85

QG (typ) (nC)

3.6

QGD (typ) (nC)

0.5

QGS (typ) (nC)

1.1

ID - silicon limited at TC=25°C (A)

9.6

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

WSON (DQK)-6-4 mm² 2 x 2

Features

  • Ultra-low Qg and Qgd
  • Low on resistance
  • Low thermal resistance
  • Pb-free
  • RoHS compliant
  • Halogen free
  • SON 2mm × 2mm plastic package
  • Ultra-low Qg and Qgd
  • Low on resistance
  • Low thermal resistance
  • Pb-free
  • RoHS compliant
  • Halogen free
  • SON 2mm × 2mm plastic package

Description

This 19.9mΩ, –20V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2mm × 2mm plastic package make the device ideal for battery operated space constrained operations.

This 19.9mΩ, –20V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2mm × 2mm plastic package make the device ideal for battery operated space constrained operations.

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