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CSD19536KTT
  • CSD19536KTT

CSD19536KTT

ACTIVE

100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm

Texas Instruments CSD19536KTT Product Info

1 April 2026 0

Parameters

VDS (V)

100

VGS (V)

20

Type

N-channel

Configuration

Single

Rds(on) at VGS=10 V (max) (mΩ)

2.4

VGSTH typ (typ) (V)

2.5

QG (typ) (nC)

118

QGD (typ) (nC)

17

QGS (typ) (nC)

37

ID - silicon limited at TC=25°C (A)

272

ID - package limited (A)

200

Logic level

No

Rating

Catalog

Operating temperature range (°C)

-55 to 175

Package

TO-263 (KTT)-2-153.416 mm² 10.16 x 15.1

Features

  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche rated
  • Lead-free terminal plating
  • RoHS compliant
  • Halogen free
  • D2PAK plastic package
  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche rated
  • Lead-free terminal plating
  • RoHS compliant
  • Halogen free
  • D2PAK plastic package

Description

This 100V, 2mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

This 100V, 2mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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