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CSD19536KCS
  • CSD19536KCS

CSD19536KCS

ACTIVE

100-V, N channel NexFET™ power MOSFET, single TO-220, 2.7 mOhm

Texas Instruments CSD19536KCS Product Info

1 April 2026 0

Parameters

VDS (V)

100

VGS (V)

20

Type

N-channel

Configuration

Single

Rds(on) at VGS=10 V (max) (mΩ)

2.7

VGSTH typ (typ) (V)

2.5

QG (typ) (nC)

118

QGD (typ) (nC)

17

QGS (typ) (nC)

37

ID - silicon limited at TC=25°C (A)

259

ID - package limited (A)

150

Logic level

No

Rating

Catalog

Operating temperature range (°C)

-55 to 175

Package

TO-220 (KCS)-3-46.228 mm² 10.16 x 4.55

Features

  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche rated
  • Pb-Free terminal plating
  • RoHS compliant
  • Halogen free
  • TO-220 plastic package
  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche rated
  • Pb-Free terminal plating
  • RoHS compliant
  • Halogen free
  • TO-220 plastic package

Description

This 100V, 2.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

This 100V, 2.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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