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CSD17579Q3A
  • CSD17579Q3A
  • CSD17579Q3A

CSD17579Q3A

ACTIVE

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.2 mOhm

Texas Instruments CSD17579Q3A Product Info

1 April 2026 2

Parameters

VDS (V)

30

VGS (V)

20

Type

N-channel

Configuration

Single

Rds(on) at VGS=10 V (max) (mΩ)

10.2

Rds(on) at VGS=4.5 V (max) (mΩ)

14.2

VGSTH typ (typ) (V)

1.5

QG (typ) (nC)

5.3

QGD (typ) (nC)

1.2

QGS (typ) (nC)

2.2

ID - silicon limited at TC=25°C (A)

39

ID - package limited (A)

20

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

VSONP (DNH)-8-10.89 mm² 3.3 x 3.3

Features

  • Low Qg and Qgd
  • Low RDS(on)
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free
  • RoHS Compliant
  • Halogen Free
  • SON 3.3 mm × 3.3 mm Plastic Package
  • Low Qg and Qgd
  • Low RDS(on)
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free
  • RoHS Compliant
  • Halogen Free
  • SON 3.3 mm × 3.3 mm Plastic Package

Description

This 30 V, 8.7 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

This 30 V, 8.7 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

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