0
CSD13306W
  • CSD13306W
  • CSD13306W

CSD13306W

ACTIVE

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm

Texas Instruments CSD13306W Product Info

1 April 2026 0

Parameters

VDS (V)

12

VGS (V)

10

Type

N-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

10.2

Rds(on) at VGS=2.5 V (max) (mΩ)

15.5

VGSTH typ (typ) (V)

1

QG (typ) (nC)

8.6

QGD (typ) (nC)

3

QGS (typ) (nC)

1.1

ID - silicon limited at TC=25°C (A)

3.5

ID - package limited (A)

3.5

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

DSBGA (YZC)-6-2.1875 mm² 1.75 x 1.25

Features

  • Ultra Low on Resistance
  • Low Qg and Qgd
  • Small Footprint 1 × 1.5 mm
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • Ultra Low on Resistance
  • Low Qg and Qgd
  • Small Footprint 1 × 1.5 mm
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free

Description

This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.

This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.

Subscribe to Welllinkchips !
Your Name
* Email
Submit a request