0
VDS (V) |
12 |
VGS (V) |
10 |
Type |
N-channel |
Configuration |
Single |
Rds(on) at VGS=4.5 V (max) (mΩ) |
10.2 |
Rds(on) at VGS=2.5 V (max) (mΩ) |
15.5 |
VGSTH typ (typ) (V) |
1 |
QG (typ) (nC) |
8.6 |
QGD (typ) (nC) |
3 |
QGS (typ) (nC) |
1.1 |
ID - silicon limited at TC=25°C (A) |
3.5 |
ID - package limited (A) |
3.5 |
Logic level |
Yes |
Rating |
Catalog |
Operating temperature range (°C) |
-55 to 150 |
DSBGA (YZC)-6-2.1875 mm² 1.75 x 1.25
This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.