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CSD13202Q2
  • CSD13202Q2
  • CSD13202Q2
  • CSD13202Q2

CSD13202Q2

ACTIVE

12-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 9.3 mOhm

Texas Instruments CSD13202Q2 Product Info

1 April 2026 1

Parameters

VDS (V)

12

VGS (V)

8

Type

N-channel

Configuration

Single

Rds(on) at VGS=4.5 V (max) (mΩ)

9.3

Rds(on) at VGS=2.5 V (max) (mΩ)

11.6

VGSTH typ (typ) (V)

0.8

QG (typ) (nC)

5.1

QGD (typ) (nC)

0.76

QGS (typ) (nC)

0.98

ID - silicon limited at TC=25°C (A)

14.4

ID - package limited (A)

22

Logic level

Yes

Rating

Catalog

Operating temperature range (°C)

-55 to 150

Package

WSON (DQK)-6-4 mm² 2 x 2

Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package

Description

This 12-V, 7.5-mΩ NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2 × 2 offers excellent thermal performance for the size of the package.

This 12-V, 7.5-mΩ NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2 × 2 offers excellent thermal performance for the size of the package.

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