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2N7002L-Q1
  • 2N7002L-Q1

2N7002L-Q1

PREVIEW

Low Cost Discrete FET (N-Channel MOSFET)

Texas Instruments 2N7002L-Q1 Product Info

1 April 2026 0

Parameters

Bits (#)

1

Topology

Integrated FET

Direction control (typ)

Fixed-direction

Vin (min) (V)

0.95

Vin (max) (V)

7

Vout (min) (V)

0.95

Vout (max) (V)

6

Applications

GPIO

Prop delay (ns)

7

Technology family

2N

Rating

Catalog

Operating temperature range (°C)

-40 to 125

Package

SOT-23 (DBZ)-3-6.9204 mm² 2.92 x 2.37

Features

  • Low On-Resistantance

  • Low Gate Threshold Voltage

  • Low Input Capacitance

  • Fast Switching Speed

  • Operating Junction and Storage Temperature:
    • –65°C to +150°C
  • 2kV Gate-Source ESD Rating

  • Low On-Resistantance

  • Low Gate Threshold Voltage

  • Low Input Capacitance

  • Fast Switching Speed

  • Operating Junction and Storage Temperature:
    • –65°C to +150°C
  • 2kV Gate-Source ESD Rating

Description

This device is a N-channel Field-Effect Transistor in a plastic package. It has been designed to minimize the on-state resistance while maintaining fast switching performance.

This device is a N-channel Field-Effect Transistor in a plastic package. It has been designed to minimize the on-state resistance while maintaining fast switching performance.

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