0
In Production
Configuration |
Phase Leg |
Silicon Type |
SiC MOSFET |
VDSS (V) |
1700 |
Current A (ampere) |
538 |
RDSon (mΩ) typ |
2.9 |
Total Gate Charge (nC) |
2136 |
Rise Time tR ns (nanosecond) |
63 |
Fall Time tF ns (nanosecond) |
48 |
MaxOperatingJunctionTemp |
175 |
RadHard |
Yes |
HiRel |
Yes |
PKG |
SP6LI |
• SiC Power MOSFET
• Kelvin source for easy drive
• Low stray inductance
• Internal thermistor for temperature monitoring
• High efficiency converter
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant