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MSCSM170AM029CT6LIAG
  • MSCSM170AM029CT6LIAG

MSCSM170AM029CT6LIAG

In Production

•    SiC Power MOSFET •    Kelvin source for easy drive •    Low stray inductance •    Internal thermistor for temperature monitoring •    High efficiency converter •    Outstanding performance at high frequency operation •    Stable temperature behavior •    Direct mounting to heatsink (isolated package) •    Low junction to case thermal resistance •    RoHS Compliant...

Microchip Technology MSCSM170AM029CT6LIAG Product Info

16 April 2026 0

Parameters

Configuration

Phase Leg

Silicon Type

SiC MOSFET

VDSS (V)

1700

Current A (ampere)

538

RDSon (mΩ) typ

2.9

Total Gate Charge (nC)

2136

Rise Time tR ns (nanosecond)

63

Fall Time tF ns (nanosecond)

48

MaxOperatingJunctionTemp

175

RadHard

Yes

HiRel

Yes

PKG

SP6LI

Features

  • Phase Leg
  • VDSS (V): 1700
  • RDSon (mR) typ: 2.9
  • Current (A) Tc=80C: 538
  • Silicon Type: SiC MOSFET
  • Package: SP6LI
  • Description

    •    SiC Power MOSFET
    •    Kelvin source for easy drive
    •    Low stray inductance
    •    Internal thermistor for temperature monitoring
    •    High efficiency converter
    •    Outstanding performance at high frequency operation
    •    Stable temperature behavior
    •    Direct mounting to heatsink (isolated package)
    •    Low junction to case thermal resistance
    •    RoHS Compliant

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