0
In Production
Reverse Voltage [max] Max |
3300 |
Forward Current (A) [max] |
90 |
Forward Current Surge Peak A (ampere) |
615 |
Forward Voltage [typ] |
2.1 |
Reverse Leakage Current [typ] µA (microampere) |
15 |
Total Capacitive Charge (Qc) V (volt) |
927 |
Dual Diode |
No |
Junction Temperature (°C) |
-55 - 175 |
Package Type |
TO-247 MAX |
Our mSiC Diodes are engineered to deliver superior performance and efficiency. Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer a lower forward voltage drop, higher switching speeds and reduced power losses. This enables improved efficiency, reduced thermal requirements and enhanced reliability.
This 3300V (3.3 kV) mSiC diode offers significant advantages in diverse applications with a forward current rating of up to 90A ensures robust performance in high-power applications. The reverse leakage current is minimized to 15 µA, providing excellent efficiency and reliability. Bare die mSiC diodes offer unmatched flexibility and performance for custom power module designs and compact, high-efficiency systems.
WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK
