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MSCDC200KK70D1PAG
  • MSCDC200KK70D1PAG

MSCDC200KK70D1PAG

In Production

SiC Schottky DiodeZero reverse recoveryZero forward recoveryTemperature Independent switching behaviorPositive temperature coefficient on VFLow stray inductanceHigh efficiency converterOutstanding performance at high frequency operationStable temperature behaviorDirect mounting to heatsink (isolated package)Low junction to case thermal resistanceRoHS Compliant

Microchip Technology MSCDC200KK70D1PAG Product Info

16 April 2026 0

Parameters

Configuration

Dual Common Cathode

Silicon Type

SiC Diode

VRRM (V)

700

Current A (ampere)

200

VF (V)

1.5

Total Capacitive Charge

532

Reverse Leakage Current

60

MaxOperatingJunctionTemp

175

PKG

D1P

Features

  • Configuration: Dual Common Cathode
  • VRRM (V): 700
  • VF (V): 1.5
  • Current (A) Tc=80C: 200
  • Silicon type: SiC Diode
  • Package: D1P

    • Description

    • SiC Schottky Diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature Independent switching behavior
    • Positive temperature coefficient on VF
    • Low stray inductance
    • High efficiency converter
    • Outstanding performance at high frequency operation
    • Stable temperature behavior
    • Direct mounting to heatsink (isolated package)
    • Low junction to case thermal resistance
    • RoHS Compliant

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