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In Production
Device Family |
MB |
Drain Source Voltage Max V (volt) |
1200 |
Gate Drive Voltage (V) |
18-15 |
On-State Resistance (VGS = 18V) mΩ (milliohm) |
80 |
On-State Resistance (VGS = 15V) mΩ (milliohm) |
98 |
Continuous Drain Current Max (Ampere) |
30 |
Output Capacitance (pF) |
41 |
Junction Temperature (°C) |
-55 - 175 |
Package Type |
Die |
Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.
MSC080SMB120D/S is part of our MB Family of mSiC MOSFETs and delivers an optimal balance of performance, reliability and cost-effectiveness. This 1200V SiC MOSFET is compatible with a VGS of 15V enabling easy design-in and reuse of existing drive circuits. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.
SiC bare die MOSFETs offers system-level customization for highly efficient and compact advanced power electronics solutions. Our mSiC solutions which span die, discretes and modules, enhance design flexibility and scalability, empowering innovation across a wide range of system architectures.
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