Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.

The MSC080SMA120SCT/R is part of our MA Family of mSiC MOSFETs. This 1200V SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 80 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 43A. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.

Power Surface Mount Top-Side Cooled (PSMT) packages are cutting-edge semiconductor devices engineered to optimize power efficiency and thermal management in high-performance applications. The PSMT packaging facilitates effective top-side cooling, significantly improving heat dissipation and enabling more compact, reliable designs.