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TP5335
  • TP5335
  • TP5335

TP5335

In Production

TP5335 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired....

Microchip Technology TP5335 Product Info

16 April 2026 0

Parameters

BVdss min (V)

-350

Rds (on) max (Ohms)

30

CISSmax (pF)

110

Vgs(th) max (V)

-2.4

Package

SOT-23

Features

    • High input impedance and high gain
    • Low power drive requirement
    • Ease of paralleling
    • Low CISS and fast switching speeds
    • Excellent thermal stability
    • Integral source-drain diode
    • Free from secondary breakdown

Description

TP5335 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

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