Product
0
MSC020SMB120B4N
  • MSC020SMB120B4N

MSC020SMB120B4N

In Production

Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.MSC020SMB120B4N is part of our MB Family of mSiC MOSFETs and delivers an optimal balance of performance, reliability and cost-effectiveness. This 1200V SiC MOSFET is compatible with a VGS of 15V enabling easy design-in and reuse of existing drive circuits. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.The TO-247-4 Notch package enables efficient, high-power designs with improved therma...

Microchip Technology MSC020SMB120B4N Product Info

16 April 2026 0

Parameters

Device Family

MB

Drain Source Voltage Max V (volt)

1200

Gate Drive Voltage (V)

18-15

On-State Resistance (VGS = 18V) mΩ (milliohm)

20

On-State Resistance (VGS = 15V) mΩ (milliohm)

24

Continuous Drain Current Max (Ampere)

94

Output Capacitance (pF)

152

Junction Temperature (°C)

-55 - 175

Package Type

TO-247-4 Notch

Features

  • Low on-resistance RDS(on) reduces conduction losses, improving efficiency and thermal performance
  • Capable of high-frequency operation allows for smaller magnetics, improved power density, and lower system cost
  • Low capacitances and gate charge (Qg) enables efficient, high-speed switching and reduces gate drive losses
  • Superior avalanche ruggedness and short-circuit withstand time ensures robust protection and reliability under fault conditions
  • HV-H3TRB proven capability ensures long-term reliability in high humidity environments
  • Enhanced compatibility with lower VGS and standard packages allow for better compatibility with standard gate drivers
  • Increased creepage distance (Notch) improves safety and reliability in high-voltage designs
  • Industrial & AEC-Q101 Qualified options available
  • RoHS compliant to meet environmental and regulatory standards

    • Description

    Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.


    MSC020SMB120B4N is part of our MB Family of mSiC MOSFETs and delivers an optimal balance of performance, reliability and cost-effectiveness. This 1200V SiC MOSFET is compatible with a VGS of 15V enabling easy design-in and reuse of existing drive circuits. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.


    The TO-247-4 Notch package enables efficient, high-power designs with improved thermal performance and reduced parasitic effects. Its four-lead layout includes a Kelvin source for lower gate ringing and switching losses, while the Notch design enhances creepage distance for better high-voltage reliability.

    Subscribe to Welllinkchips !
    Your Name
    * Email
    Popular Posts
    Featured Parts More >
    Submit a request
    CONTACT US
    Company address

    WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

    Send Enquiry
    SEND e-MAIL
    Office hour from 9am to 6pm ,
    Monday through Friday, UTC/GMT +8