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MIC5060
  • MIC5060

MIC5060

In Production

The MIC5060 MOSFET gate driver is designed for gate control of N-Channel, enhancement-mode, and power MOSFETs used as high-side or low-side switches. The MIC5060 can sustain an on-state output indefinitely.The MIC5060 operates from a 2.75 V to 30 V supply. In high-side configurations, the driver can control MOSFETs that switch loads of up to 30 V. In low-side configurations, with separate supplies, the maximum switched voltage is limited only by the MOSFET.The MIC5060 has a non-inverting, TTL-compatible control input. The MIC5060 features an internal charge pump that can sustain a gate voltage greater than the available supply voltage. The driver is capable of turning on a logic-level MOSFET from a 2.75 V supply or a standard MOSFET from a 5 V supply. The gate-to-source output voltage is i...

Microchip Technology MIC5060 Product Info

16 April 2026 0

Parameters

Capacitive Load Drive

1000 pF in 60 µs

MOSFET Driver Type

High Side

Supply Voltage Max V (volt)

30

Peak Sink Current A (ampere)

0.0008

Peak Source Current A (ampere)

0.0008

Propagation Delay tD1 ns (nanosecond)

0

Propagation Delay tD2 ns (nanosecond)

0

Sink Resistance Ω (ohm)

0

Source Resistance Ω (ohm)

0

Fall Time tF ns (nanosecond)

6000

Rise Time tR ns (nanosecond)

90000

# of Outputs

1

Integrated MOSFETs

External

Peak High-Side Source Current (Ampere)

0.0008

Peak Low-Side Source Current (Ampere)

0.0008

Peak High-Side Sink Current (Ampere)

0.0008

Supply Voltage Min V (volt)

2.75

Bootstrap Supply Voltage Max V (volt)

15

High-Side Rise Time (ns)

90000

Low-Side Rise Time (ns)

90000

High-Side Fall Time (ns)

6000

Low-Side Fall Time (ns)

6000

Temp Range (T-Ambient) Min °C (degrees Celsius)

-40

Temp Range (T-Ambient) Max °C (degrees Celsius)

85

Output Configuration

High-Side

Features

  • 2.75 V to 30 V operation
  • 100 µA maximum supply current (5 V supply)
  • 15 µA typical off-state current
  • Internal charge pump
  • TTL-compatible input
  • Withstands 60V transient (load dump)
  • Reverse battery protected to -20 V
  • Inductive spike protected to -20 V
  • Overvoltage shutdown at 35 V
  • Internal 15 V gate protection
  • Minimum external parts
  • Operates in high-side or low-side configurations
  • 1 µA control input pull-off
  • Available in 8-pin 3 x 3 mm MLF® package
  • Description

    The MIC5060 MOSFET gate driver is designed for gate control of N-Channel, enhancement-mode, and power MOSFETs used as high-side or low-side switches. The MIC5060 can sustain an on-state output indefinitely.

    The MIC5060 operates from a 2.75 V to 30 V supply. In high-side configurations, the driver can control MOSFETs that switch loads of up to 30 V. In low-side configurations, with separate supplies, the maximum switched voltage is limited only by the MOSFET.

    The MIC5060 has a non-inverting, TTL-compatible control input. The MIC5060 features an internal charge pump that can sustain a gate voltage greater than the available supply voltage. The driver is capable of turning on a logic-level MOSFET from a 2.75 V supply or a standard MOSFET from a 5 V supply. The gate-to-source output voltage is internally limited to approximately 15 V.

    The MIC5060 is protected against automotive load dump, reversed battery, and inductive load spikes of -20 V. The driver's overvoltage shutdown feature turns off the external MOSFET at approximately 35 V to protect the load against power supply excursions. The MIC5060 is available in a 3 x 3 mm MLF® package.

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