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JAN2N3997-Transistor
  • JAN2N3997-Transistor

JAN2N3997-Transistor

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This specification covers the performance requirements for NPN silicon, power 2N3996 through 2N3999 transistors for use in high-speed power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/374. Two levels of product assurance (JANHC and JANKC) are provided for the unencapsulated die.

Microchip Technology JAN2N3997-Transistor Product Info

16 April 2026 0

Features

  • The device package outlines for the encapsulated device types are as follows: 4 terminal stud (TO-111) package for types 2N3996 and 2N3997 and 3 terminal stud (TO-111) package for types 2N3998 and 2N3999.

    • Description

    This specification covers the performance requirements for NPN silicon, power 2N3996 through 2N3999 transistors for use in high-speed power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/374. Two levels of product assurance (JANHC and JANKC) are provided for the unencapsulated die.


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