• 128 Kbits x 8 (1 megabit)
• 5V ± 10% Supply
• Parallel Interface
• 120ns access time
• Self-Timed Erase and Write Cycles (10 ms max)
• Page Write and Byte Write
• Data Polling for end of write detection
• Low Power Consumption
• Read / Write current 40 mA (Max)
• Standby current TTL 2 mA (Max), CMOS 200 µA (Max)
• Write-Protection
• Hardware Data Protection
• Software Data Protection
• High-endurance Option 100,000 erase/write cycles
• Data retention > 10 years
• Temperature Ranges
• Standard Temperature Range: -40°C to 85°C
• Military Temperature Range: -55°C to 125°C
• Available in Green (Pb/Halide-free) Packaging
• 32-lead, Plastic J-leaded Chip Carrier (PLCC)
• 32-lead, Plastic Thin Small Outline Package (TSOP)
• Available in dual marked (5962-382670xxx) CERAMIC Hermetic Packaging
• 32-Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline (Cerdip)
• 32-Lead, Non-Windowed, Ceramic Bottom-Brazed Flat Package (Flatpack)
• 32-Pad, Non-windowed, Ceramic, Leadless Chip Carrier (LCC)

The Microchip AT28C010 is a high-performance 1-megabit Parallel EEPROM available in both Industrial and Military temp ranges, offering access times to 120ns with power dissipation of 220mW (440mW military). Deselected, CMOS standby current is less than 200µA (300µA military). Access like static RAM for the read or write cycle without external components; a 128byte page register to allow writing of up to 128bytes simultaneously. Features an internal Error Correction Circuit for extended endurance and improved data retention. Optional Software Data Protection mechanism guards against inadvertent writes; and an extra 128 bytes of EEPROM enables device identification or tracking.

The AT28C010 is also available DUAL MARKED where applicable with the appropriate Standard Military Drawing Number - 5962-382670xxMxx.  See the separate MIL datasheet for exact availability.