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2N6303-Transistor
  • 2N6303-Transistor

2N6303-Transistor

In Production

This 2N6303 power PNP transistor is produced by a PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200°C permits reliable operation in high ambientes, and the hermetically sealed package insures maximum reliability and long life....

Microchip Technology 2N6303-Transistor Product Info

16 April 2026 0

Features

  • High-Speed Switching
  • Medium-Current Switching
  • High-Frequency Amplifiers
  • Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min)
  • DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc
  • Low Collector-Emitter Saturation Voltage: VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc
  • High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ).

    • Description

    This 2N6303 power PNP transistor is produced by a PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200°C permits reliable operation in high ambientes, and the hermetically sealed package insures maximum reliability and long life.

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