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S80KS5123GABHB023
  • S80KS5123GABHB023

S80KS5123GABHB023

Active and preferred

S80KS5123GABHB023 is a 512 Mb HYPERRAM self-refresh DRAM with a 1.8 V Octal xSPI DDR interface, supporting up to 200 MHz clock and up to 400 MBps (3,200 Mbps) throughput with 35 ns max access time. It supports linear and wrapped bursts (16 to 128 bytes) and uses a 24-ball FBGA (1.00 mm pitch). Operating range is 1.7 V to 2.0 V, with standby, hybrid sleep, and deep power-down modes.

Infineon Technologies S80KS5123GABHB023 Product Info

16 April 2026 0

Parameters

Density

512 MBit

Family

KS-3

Initial Access Time

35 ns

Interface Bandwidth

400 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 200

Interfaces

xSPI (Octal)

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

See roadmap

Qualification

Automotive

Technology

HYPERRAM

Features

  • Octal xSPI interface with CS#
  • 8-bit DQ[7:0] data bus
  • DDR data on both clock edges
  • 200 MHz maximum clock rate
  • Up to 400 MBps data throughput
  • 35 ns maximum access time (tACC)
  • RWDS strobe, mask, latency flag
  • Configurable bursts: linear or wrap
  • Wrap bursts: 16/32/64/128 bytes
  • Hybrid sleep via CR1[5], retains data
  • Deep power down via CR0[15]
  • VCC supply range 1.7 V to 2.0 V

Description

  • Connects to xSPI host controllers
  • High bandwidth for code/data fetch
  • DDR boosts throughput per clock
  • 200 MHz supports fast memory access
  • 35 ns tACC cuts read latency
  • RWDS eases timing margin closure
  • Burst modes match cache-line reads
  • Wrapped bursts reduce bus overhead
  • Hybrid sleep saves power, keeps data
  • Deep power down minimizes leakage
  • Active clock stop saves stalled power
  • 1.8 V rails without extra supplies

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