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S80KS5123GABHA023
  • S80KS5123GABHA023

S80KS5123GABHA023

Active and preferred

The S80KS5123GABHA023 is a 512 Mb HYPERRAM™ self-refresh DRAM with an Octal xSPI (DDR) interface for high-bandwidth external RAM. It runs from 1.7 V to 2.0 V (1.8 V nominal), supports up to 200 MHz clock and 400 MBps throughput, and specifies 35 ns max access time. AEC-Q100 automotive grade options and deep power down to 30 µA (105°C) help reduce power in embedded memory expansion.

Infineon Technologies S80KS5123GABHA023 Product Info

16 April 2026 0

Parameters

Density

512 MBit

Family

KS-3

Initial Access Time

35 ns

Interface Bandwidth

400 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 200

Interfaces

xSPI (Octal)

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

See roadmap

Qualification

Automotive

Technology

HYPERRAM

Features

  • Octal xSPI interface with CS#
  • 8-bit DQ[7:0] data bus
  • DDR data on both clock edges
  • 200 MHz maximum clock rate
  • Up to 400 MBps data throughput
  • 35 ns maximum access time (tACC)
  • RWDS strobe, mask, latency flag
  • Configurable bursts: linear or wrap
  • Wrap bursts: 16/32/64/128 bytes
  • Hybrid sleep via CR1[5], retains data
  • Deep power down via CR0[15]
  • VCC supply range 1.7 V to 2.0 V

Description

  • Connects to xSPI host controllers
  • High bandwidth for code/data fetch
  • DDR boosts throughput per clock
  • 200 MHz supports fast memory access
  • 35 ns tACC cuts read latency
  • RWDS eases timing margin closure
  • Burst modes match cache-line reads
  • Wrapped bursts reduce bus overhead
  • Hybrid sleep saves power, keeps data
  • Deep power down minimizes leakage
  • Active clock stop saves stalled power
  • 1.8 V rails without extra supplies

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