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IAUZ18N10S5L420
  • IAUZ18N10S5L420

IAUZ18N10S5L420

Active and preferred

Infineon Technologies IAUZ18N10S5L420 Product Info

16 April 2026 0

Parameters

Country of Assembly (Last BE site, current, subject to change)

Malaysia

Country of Diffusion (Last FE site, current, subject to change)

Austria, Germany

ID (@25°C) max

18 A

Launch year

2019

Operating Temperature range

-55 °C to 175 °C

Package

PG-TSDSON-8

Planned to be available until at least

2038

Polarity

N

QG (typ @10V)

5.4 nC

QG (typ @10V) max

8 nC

Qualification

Automotive

RDS (on) (@10V) max

42 mΩ

RDS (on) (@4.5V) max

55 mΩ

Technology

OptiMOS™5

Topology

OptiMOS™-5

VDS max

100 V

VGS(th) range

1.2 V to 2.2 V

VGS(th)

1.7 V

Apps

Automotive LED lighting systems, Chassis control & safety, Electronic stability control, Automotive BMS

Features

  • OptiMOS™ 5 power MOSFET for automotive
  • N-channel-Enhancement mode-Logic Level
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • PPAP Capable Device

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