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S80KS5122GABHI023
  • S80KS5122GABHI023

S80KS5122GABHI023

Active and preferred

S80KS5122GABHI023 is a 512 Mb HYPERRAM self-refresh DRAM with a 1.8 V HYPERBUS interface for high-bandwidth memory expansion in embedded and automotive systems. It supports DDR transfers up to 200 MHz (400 MBps) with 35 ns max access time, configurable linear or wrapped bursts, and hybrid sleep and deep power-down modes. It is in a 24-ball FBGA package and operates from 1.7 V to 2.0 V.

Infineon Technologies S80KS5122GABHI023 Product Info

16 April 2026 0

Parameters

Density

512 MBit

Family

KS-2

Initial Access Time

35 ns

Interface Bandwidth

400 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 200

Interfaces

HYPERBUS

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

See roadmap

Qualification

Industrial

Technology

HYPERRAM

Apps

High-performance cockpit controller

Features

  • HyperBus interface
  • 1.7 V to 2.0 V VCC supply
  • Single or differential clock input
  • 8-bit DDR bus with RWDS strobe
  • 200 MHz maximum clock rate
  • Up to 400 MBps data throughput
  • 35 ns maximum access time tACC
  • Burst: linear or wrapped
  • Wrap bursts: 16/32/64/128 bytes
  • Interface standby ignores I/O pins
  • Active clock stop after tACC+30 ns
  • Hybrid sleep via CR1[5], data kept

Description

  • 400 MBps supports fast buffering
  • DDR boosts bandwidth per pin
  • 1.8 V I/O matches low-voltage SoCs
  • RWDS strobe eases timing closure
  • Linear burst fits streaming reads
  • Wrap bursts match cache line fills
  • Standby reduces idle power draw
  • Clock stop saves power on stalls
  • Hybrid sleep keeps RAM contents
  • HS entry in 3 us reduces wake cost
  • HS exit in 100 us improves response
  • Deep power down cuts leakage

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