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S80KS2563GABHM020
  • S80KS2563GABHM020

S80KS2563GABHM020

Active and preferred

S80KS2563GABHM020 is a 256 Mb HYPERRAM™ self-refresh DRAM with a 1.8 V Octal xSPI (DDR) interface using CS#, DQ[7:0], RWDS, and RESET#. It supports up to 200 MHz clock for up to 400 MBps throughput and 35 ns maximum access time, with configurable linear and wrapped bursts. The AEC-Q100 Grade 1 option operates from 1.7 V to 2.0 V across -40 to 125°C in a 24-ball FBGA package, with hybrid sleep and deep power-down.

Infineon Technologies S80KS2563GABHM020 Product Info

16 April 2026 0

Parameters

Density

256 MBit

Family

KS-3

Initial Access Time

35 ns

Interface Bandwidth

400 MByte/s

Interface Frequency (SDR/DDR) (MHz)

- / 200

Interfaces

xSPI (Octal)

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 125 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

See roadmap

Qualification

Automotive

Technology

HYPERRAM

Apps

Automotive body electronics & power distribution

Features

  • Octal xSPI interface, DDR
  • 200 MHz maximum clock rate
  • Up to 400 MBps (3,200 Mbps)
  • 8-bit data bus DQ[7:0]
  • RWDS strobe and write data mask
  • Optional diff clock CK/CK#
  • Hardware reset pin RESET#
  • Linear or wrapped burst 16-128 B
  • Hybrid burst: wrapped then linear
  • Hybrid sleep retains memory data
  • Deep power down stops all refresh
  • 1.7 V to 2.0 V VCC supply

Description

  • DDR octal cuts pin count vs 16-bit
  • 400 MBps speeds memory bandwidth
  • 200 MHz supports fast xSPI hosts
  • RWDS improves DDR timing margin
  • Diff clock improves signal integrity
  • RESET# enables robust recovery
  • Burst options optimize bus efficiency
  • Hybrid burst fits cacheline fetches
  • Hybrid sleep lowers power, keeps data
  • Deep power down minimizes standby I
  • Low VCC reduces system power
  • ESD ratings improve handling margin

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