Product
0
BTS3060TF
  • BTS3060TF

BTS3060TF

Active and preferred

The power transistor is built by a N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3060TF is automotive qualified and is optimized for 12V automotive and industrial applications.

Infineon Technologies BTS3060TF Product Info

16 April 2026 0

Parameters

Certifications

ISO 26262-ready

Channels

1

Classification

ISO 26262-ready

Control Interface

Discrete

Diagnostics

-

EAS/Avalanche Energy

55 mJ

EAS (Energy capability)

55 mJ

Family

HITFET™ + 12V

ID(lim) min

10.5 A

ID

3 A

IL(LIM) min

10.5 A

IL(nom)

3 A

IL (Short Circuit Current)

10.5 A

Load Current

3 A

Mounting

SMT

Nominal Load Current per channel

3 A

Operating Temperature range

-40 °C to 150 °C

Planned to be available until at least

2039

Protection strategy

Latch

RDS (on) (@ Tj = 25°C)

50 mΩ

RDS (on) (@ Tj = 150°C) max

135 mΩ

Recommended Operating Voltage max

42 V

toff (Turn OFF time) max

130 µs

ton (Turn ON time) max

76 µs

VDS max

42 V

Apps

Electric vehicle drivetrain system

Features

  • clamping for overvoltage protection
  • current limitation for PCB
  • Electrostatic discharge protection (ESD)
  • overtemperature latch shutdown
  • 3.3V and 5V compatible logic input
  • low power DMOS leakage current in OFF
  • Green Product (RoHS compliant)
  • AEC Qualified

Description

  • High robustness
  • 3.3V Microcontroller compatible
  • Low DMOS leakage current

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8