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S70GL02GS11FHA010
  • S70GL02GS11FHA010

S70GL02GS11FHA010

Active and preferred

The S70GL02GS11FHA010 is a 2 Gbit (256 MB) parallel NOR flash memory using MIRRORBIT™ technology. It delivers 25 ns page access, 110 ns random access, and operates from 2.7 V to 3.6 V supply with Versatile I/O™ (1.65 V to VCC). Features include a 512-byte programming buffer, uniform 128 KB sectors (2048 total), robust sector protection, 100,000 erase cycles per sector, and 20-year data retention.

Infineon Technologies S70GL02GS11FHA010 Product Info

16 April 2026 0

Parameters

Density

2 GBit

Family

GL-S

Initial Access Time

110 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

20 ns

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Automotive

Features

  • 65-nm MIRRORBIT™ process technology
  • Parallel 3.0 V operation
  • Versatile I/O voltage: 1.65 V to VCC
  • 16-bit data bus
  • 16-word/32-byte page read buffer
  • 512-byte programming buffer
  • Uniform 128-KB sectors
  • Suspend/Resume for program/erase
  • Advanced sector protection (ASP)
  • 1024-byte OTP array with lockable regions
  • WP# input for sector protection
  • 25 ns page access, 110 ns random access

Description

  • High density enables large code/data storage
  • Fast access improves system performance
  • Flexible I/O voltage eases system integration
  • Large buffers speed up read/write operations
  • Uniform sectors simplify memory management
  • Suspend/Resume boosts multitasking
  • Robust protection secures critical data
  • OTP array supports secure storage
  • WP# input prevents accidental overwrite
  • Low standby current saves power
  • High endurance reduces maintenance
  • Long retention ensures data reliability

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