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S70FS01GSAGBHI210
  • S70FS01GSAGBHI210

S70FS01GSAGBHI210

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The S70FS01GSAGBHI210 is a 1 Gb (128 MB) dual-die SPI NOR Flash memory based on 65 nm MirrorBit™ technology, featuring Eclipse architecture for fast program and erase. It supports multi-I/O SPI up to 133 MHz and DDR, operates from 1.7 V to 2.0 V, and covers automotive temperature ranges up to 125°C (AEC-Q100 Grade 1).

Infineon Technologies S70FS01GSAGBHI210 Product Info

16 April 2026 0

Parameters

Density

1 GBit

Family

FS-S

Interface Bandwidth

66 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / -

Interfaces

Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

1.7 V to 2 V

Operating Voltage

1.8 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • SPI with multi-I/O support
  • Supports clock polarity and phase modes 0, 3
  • DDR and SDR command protocols
  • 24- or 32-bit addressing options
  • Compatible with S25FL1-K, S25FL-P, S25FL-S
  • Normal, Fast, Dual, Quad, DDR Quad I/O Read
  • Burst wrap and Quad peripheral interface
  • Internal hardware ECC with single bit
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles per sector min
  • 20 year data retention minimum
  • 1.7 V to 2.0 V single supply voltage

Description

  • Multi-I/O enables high data throughput
  • DDR/SDR modes offer flexible speed options
  • 24/32-bit addressing supports large designs
  • Compatibility eases migration from other SPI
  • Multiple read modes optimize performance
  • QPI mode enables fast quad data transfers
  • ECC ensures reliable data storage
  • Hybrid/uniform erase fits varied applications
  • High endurance for frequent updates
  • Long retention secures critical data
  • Low voltage reduces power consumption
  • Wide temp range supports harsh environments

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