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S25FL128SAGMFV011
  • S25FL128SAGMFV011

S25FL128SAGMFV011

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The S25FL128SAGMFV011 is a 128 Mb (16 MB) SPI NOR flash memory using Infineon's 65-nm MIRRORBIT™ technology and Eclipse architecture for fast program and erase. It supports single, dual, and quad SPI Multi-I/O, with SDR and DDR read commands up to 133 MHz (52 MBps Quad, 80 MBps Quad DDR). Operating from 2.7 V to 3.6 V core and 1.65 V to 3.6 V I/O, it offers 100,000 program-erase cycles, 20-year data retention, and advanced security features.

Infineon Technologies S25FL128SAGMFV011 Product Info

16 April 2026 0

Parameters

Density

128 MBit

Family

FL-S

Interface Bandwidth

52 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / -

Interfaces

Quad SPI

Lead Ball Finish

Matte Tin Plating

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • CMOS 3.0 V core with versatile I/O
  • SPI interface with multi-I/O support
  • DDR and SDR clocking options
  • Extended addressing: 24- or 32-bit
  • Multiple read modes: Normal, Fast, Dual
  • Page programming up to 1.5 MBps
  • Automatic ECC with single-bit correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles min
  • 20-year data retention min
  • 1024-byte OTP security region
  • Advanced sector and block protection

Description

  • Flexible I/O simplifies system integration
  • High-speed SPI boosts data throughput
  • DDR/SDR options enable design flexibility
  • Extended addressing supports large memory
  • Multiple read modes optimize performance
  • Fast programming accelerates production
  • ECC improves data reliability
  • Sector options ease legacy migration
  • High endurance lowers maintenance cost
  • Long retention ensures data safety
  • OTP region enables secure device ID
  • Robust protection enhances data security

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