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S70FL01GSDPBHIC13
  • S70FL01GSDPBHIC13

S70FL01GSDPBHIC13

Active and preferred

The S70FL01GSDPBHIC13 is a 1 Gbit FL-S Flash memory with dual-die stack, accessible via chip select. It supports SPI Multi-I/O up to Quad DDR, operates at 3.0 V, and meets AEC-Q100 Grade 1 (-40°C to +125°C) for automotive use. Uniform 256-kbyte sectors, 100,000 program-erase cycles, and 20-year data retention ensure reliability. Security features include OTP and block protection. Typical read current is up to 90 mA, standby as low as 200 μA.

Infineon Technologies S70FL01GSDPBHIC13 Product Info

16 April 2026 0

Parameters

Density

1 GBit

Family

FL-S

Interface Bandwidth

66 MByte/s

Interface Frequency (SDR/DDR) (MHz)

133 / 66

Interfaces

Quad SPI

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 85 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • Dual-die stack architecture
  • SPI Multi-I/O interface
  • Supports normal, fast, dual, quad, DDR reads
  • 32-bit extended addressing
  • 512-byte page programming buffer
  • 100,000 program-erase cycles minimum
  • 20-year data retention minimum
  • One Time Program (OTP) 2048 bytes
  • Block and advanced sector protection
  • Core voltage: 2.7 V to 3.6 V
  • I/O voltage: 1.65 V to 3.6 V
  • SCK up to 133 MHz (single), 104 MHz (quad)

Description

  • High capacity in compact footprint
  • Flexible interface for system integration
  • Fast data access for demanding apps
  • Large address space for big data
  • Efficient page programming boosts speed
  • Reliable for frequent program/erase cycles
  • Long-term data retention for safety
  • Secure OTP for code/data storage
  • Robust protection against accidental writes
  • Operates in standard 3 V systems
  • Compatible with various I/O voltages
  • High-speed operation for fast throughput

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