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IMBG120R034M2H
  • IMBG120R034M2H

IMBG120R034M2H

Active and preferred

The 1200 V, 34 mΩ G2 in a TO-263-7 (D2PAK-7L) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Infineon Technologies IMBG120R034M2H Product Info

16 April 2026 0

Parameters

Ciss

1510 pF

Coss

64 pF

ID (@25°C) max

58 A

Mounting

SMD

Operating Temperature range

-55 °C to 175 °C

Package

TO-263-7

Pin Count

7 Pins

Polarity

N

Ptot (@ TA=25°C) max

278 W

Qgd

121 nC

QG

45 nC

Qualification

Industrial

RDS (on) (@ Tj = 25°C)

34 mΩ

RthJA max

62 K/W

RthJC max

0.53 K/W

Technology

CoolSiC™ G2

Tj max

200 °C

VDS max

1200 V

Apps

EV charging, General purpose motor drive, 3-phase string inverter solutions, Uninterruptible power supplies (UPS)

Features

  • RDS(on) = 34 mΩ at VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Overload operation up to Tvj = 200°C
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage, VGS(th) = 4.2 V
  • Robust against parasitic turn on
  • 0 V turn-off gate voltage can be applied
  • Robust body diode for hard commutation
  • .XT interconnection technology

Description

  • Better energy efficiency
  • Cooling optimization
  • Higher power density
  • New robustness features
  • Highly reliable

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