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S29GL512T11DHV020
  • S29GL512T11DHV020

S29GL512T11DHV020

Active and preferred

The S29GL512T11DHV020 is a 512 Mb (64 MB) MIRRORBIT™ flash memory with a 3.0 V core and I/O voltage range from 1.65 V to 3.6 V. It offers random access times down to 100 ns and page access as fast as 15 ns, supporting ×8/×16 data bus operation. Buffer programming up to 512 bytes, automatic ECC, 128 KB sector erase, and advanced sector protection ensure robust data integrity.

Infineon Technologies S29GL512T11DHV020 Product Info

16 April 2026 0

Parameters

Density

512 MBit

Family

GL-T

Initial Access Time

110 ns

Interface Frequency (SDR/DDR) (MHz)

NA

Interfaces

Parallel

Lead Ball Finish

Sn/Ag/Cu

Operating Temperature range

-40 °C to 105 °C

Operating Voltage range

2.7 V to 3.6 V

Operating Voltage

3 V

Page Access Time

15 ns

Peak Reflow Temp

260 °C

Planned to be available until at least

2035

Qualification

Industrial

Features

  • 45-nm MIRRORBIT™ technology
  • Single supply for read/program/erase
  • Versatile I/O voltage (1.65 V to VCC)
  • ×8/×16 data bus
  • 512-byte programming buffer
  • Hardware ECC with single bit correction
  • Uniform 128-KB sectors
  • Advanced sector protection (ASP)
  • 100,000 program/erase cycles per sector
  • 20-year data retention (typical)
  • Power-up and low VCC write inhibit
  • Status Register, Data Polling, Ready/Busy pin

Description

  • High density for embedded applications
  • Flexible I/O supports various host systems
  • Fast programming with 512-byte buffer
  • Reliable data with built-in ECC
  • Simplifies memory management with uniform
  • Enhanced data security with ASP
  • Long device lifetime, 100K cycles per sector
  • Retains data up to 20 years
  • Prevents accidental writes during power
  • Easy status monitoring and diagnostics

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