Product
0
IQE065N10NM5CG
  • IQE065N10NM5CG

IQE065N10NM5CG

Active

The OptiMOS™5 100 V PQFN 3.3x3.3 Source-Down MOSFET features low RDS(on) of 6.5 mOhm, with a flipped silicon die, which is positioned upside down inside of the component. This allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities.

Infineon Technologies IQE065N10NM5CG Product Info

16 April 2026 0

Parameters

Budgetary Price €/1k

0.92

ID (@25°C) max

85 A

Operating Temperature range

-55 °C to 175 °C

Package

PQFN 3.3x3.3 Source-Down

Polarity

N

QG (typ @10V)

34 nC

RDS (on) (@10V) max

6.5 mΩ

Special Features

Center-Gate

VDS max

100 V

VGS(th) range

2.2 V to 3.8 V

VGS(th)

3 V

Features

  • Major reduction in RDS(on)30%
  • RthJCover current PQFN
  • Standard & Center Gate available
  • New, optimized layout possibilities

Description

  • Enabling highest power density
  • Superior thermal performance
  • Efficient layout for space use
  • Simplified MOSFET parallelization
  • Improved PCB losses
  • Reduced parasitics

Subscribe to Welllinkchips !
Your Name
* Email
Popular Posts
Featured Parts More >
Submit a request
CONTACT US
Company address

WELL LINK CHIPS GROUP CO.,LIMITED FLAT/RM 1802 BEVERLY HOUSE 93-107 LOCKHART ROAD WANCHAI HK

Send Enquiry
SEND e-MAIL
Office hour from 9am to 6pm ,
Monday through Friday, UTC/GMT +8